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| 2. |
- Westbergh, Petter, 1981, et al.
(författare)
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Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications
- 2008
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Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE. ; 6997, s. 69970Y-1-8-
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Konferensbidrag (refereegranskat)abstract
- GaAs-based VCSELs emitting near 1.3 Όm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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| 4. |
- Arafin, S., et al.
(författare)
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Comprehensive analysis of electrically-pumped GaSb-based VCSELs
- 2011
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:18, s. 17267-17282
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Tidskriftsartikel (refereegranskat)abstract
- This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications.
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| 5. |
- Arafin, S., et al.
(författare)
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Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief
- 2010
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Ingår i: 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. - 9781424453689 ; , s. 61-62
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Konferensbidrag (refereegranskat)abstract
- Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.
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| 6. |
- Bamiedakis, N., et al.
(författare)
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40 Gb/s Data Transmission Over a 1-m-Long Multimode Polymer Spiral Waveguide for Board-Level Optical Interconnects
- 2015
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 33:4, s. 882-888
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Tidskriftsartikel (refereegranskat)abstract
- Optical interconnects have attracted considerable attention for use in short-reach communication links within high-performance electronic systems, such as data centers, supercomputers, and data storage systems. Multimode polymer waveguides, in particular, constitute an attractive technology for use in board-level interconnects as they can be cost-effectively integrated onto standard PCBs and allow system assembly with relaxed alignment tolerances. However, their highly multimoded nature raises important concerns about their bandwidth limitations and their potential to support very high on-board data rates. In this paper, we report record error-free (BER
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| 7. |
- Baveja, Prashant, 1985, et al.
(författare)
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Impact of device parameters on thermal performance of high speed oxide confined 850 nm VCSELs
- 2012
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 48:1, s. 17-26
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Tidskriftsartikel (refereegranskat)abstract
- We study the impact of device parameters, such asinner-aperture diameter and cavity photon lifetime, on thermal rollover mechanisms in 850-nm, oxide-confined, vertical-cavity surface-emitting lasers (VCSELs) designed for high-speed operation. We perform measurements on four different VCSELs of different designs and use our empirical thermal model for calculating the power dissipated with increasing bias currents through various physical processes such as absorption within the cavity, carrier thermalization, carrier leakage, spontaneous carrier recombination, and Joule heating. When reducing the topmirror reflectivity to reduce internal optical absorption loss we find an increase of power dissipation due to carrier leakage. There is therefore a trade-ff between the powers dissipated owing to optical absorption and carrier leakage in the sense that overcompensating for optical absorption enhances carrier leakage (and vice versa). We further find that carrier leakage places the ultimate limit on the thermal performance for this entire class ofdevices. Our analysis yields useful design optimization strategies for mitigating the impact of carrier leakage and should thereby prove useful for the performance enhancement of 850-nm, highspeed, oxide-confined VCSELs.
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| 8. |
- Baveja, P. P., et al.
(författare)
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Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling
- 2011
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:16, s. 15490-15505
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Tidskriftsartikel (refereegranskat)abstract
- We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 degrees C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-mu m inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them.
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| 9. |
- Baveja, P. P., et al.
(författare)
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Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276
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Konferensbidrag (refereegranskat)abstract
- We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them.
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